在75°C下不同濃度氫氧化鉀泥漿切割晶片的厚度減少和表面反射率隨蝕刻時(shí)間的變化，氫氧化鉀濃度在20-30%左右的蝕刻率大。另外 反射率的初下降是由于微裂紋的開口，這增強(qiáng)了表面的紋理。在75°C下不同濃度氫氧化鉀下FAS切割晶片的厚度減少和表面反射率隨蝕刻 時(shí)間的關(guān)系，F(xiàn)AS切割晶片的蝕刻速率顯示出與漿液切割晶片相同的行為，由于表面上不存在微裂紋，因此表面反射率的初始降低并不那么 明顯。

At 75 ° C, the thickness of chips cut by potassium hydroxide slurry with different concentrations decreases and the surface reflectivity changes with etching time. The etching rate is large when the potassium hydroxide concentration is about 20-30%. In addition, the initial decrease of reflectivity is due to the opening of microcracks, which enhances the surface texture. At 75 ° C, under different concentrations of potassium hydroxide, the thickness of FAS cut wafers decreases and the relationship between surface reflectivity and etching time. The etching rate of FAS cut wafers shows the same behavior as that of slurry cut wafers. Since there are no microcracks on the surface, the initial reduction of surface reflectivity is not so obvious.

通過(guò)比較漿料切割晶片和FAS切割晶片的厚度減少情況，F(xiàn)AS切割晶片在初始時(shí)間為5-10分鐘內(nèi)的蝕刻率較低，這在另外中得到了闡明 ，其中繪制了當(dāng)氫氧化鉀濃度分別為30%和47%時(shí)，漿液和FAS切割晶片的厚度減少，對(duì)于超過(guò)大約10分鐘的蝕刻時(shí)間，這兩種類型的晶片的 蝕刻速率是相同的。

By comparing the thickness reduction of slurry cut wafers and FAS cut wafers, the etching rate of FAS cut wafers is low within the initial time of 5-10 minutes, which is illustrated in another article. It is drawn that when the potassium hydroxide concentration is 30% and 47% respectively, the thickness of slurry and FAS cut wafers decreases. For the etching time exceeding about 10 minutes, the etching rate of these two types of wafers is the same.

在漿液切面的橫截面上顯示了一層非晶Si(a-Si)，典型厚度為20-40納米，在非晶態(tài)層的下面，可以觀察到一個(gè)300-600納米厚的缺陷 區(qū)域；大多數(shù)缺陷位于表面800納米的層中，但也有一些位于2000納米的深度。通過(guò)比較切割漿料和切割FAS晶片的表面結(jié)構(gòu)截面，F(xiàn)AS切割 晶片的非晶層和缺陷層平均厚2-3倍，根據(jù)在蝕刻過(guò)程中初始階段測(cè)量的蝕刻速率，TEM觀察到的非晶硅層在前2-5秒內(nèi)被蝕刻掉，因此不是 在初始階段蝕刻速率降低的原因。

A layer of amorphous Si (a-Si) is shown on the cross section of the slurry section, with a typical thickness of 20-40 nm. Under the amorphous layer, a defect area with a thickness of 300-600 nm can be observed; Most defects are located in a layer of 800 nm on the surface, but some are located at a depth of 2000 nm. By comparing the surface structure section of the cutting paste and the cutting FAS chip, the average thickness of the amorphous layer and defect layer of the FAS cutting chip is 2-3 times. According to the etching rate measured at the initial stage of the etching process, the amorphous silicon layer observed by TEM is etched in the first 2-5 seconds, so it is not the reason for the decrease of the etching rate at the initial stage.

在進(jìn)行預(yù)清洗過(guò)程時(shí)，蝕刻速率變化不大，說(shuō)明表面沒(méi)有氧化硅掩蔽層或有機(jī)殘留物層，透射電鏡調(diào)查也證實(shí)了這一發(fā)現(xiàn)。后通過(guò)FAS 和標(biāo)準(zhǔn)漿料晶片的堿性溶液中的蝕刻速率隨時(shí)間、溫度和不同的預(yù)清洗過(guò)程的變化。

During the pre cleaning process, the etching rate did not change much, indicating that there was no silicon oxide mask layer or organic residue layer on the surface. The TEM investigation also confirmed this discovery. The etching rate in alkaline solution passing through FAS and standard slurry chips varies with time, temperature and different pre cleaning processes.

結(jié)果顯示，氫氧化鉀濃度的大蝕刻率在20-30wt%左右，在初始5-10分鐘的蝕刻過(guò)程中，F(xiàn)AS晶片的蝕刻率低于漿狀晶片，這取決于氫氧 化鉀的濃度和溫度。更多關(guān)于氫氧化鉀產(chǎn)品的事項(xiàng)您可以來(lái)我們網(wǎng)站http://www.shrisa.cn進(jìn)行咨詢了解！

The results show that the large etching rate of potassium hydroxide concentration is about 20-30wt%. During the initial 5-10 minute etching process, the etching rate of FAS chip is lower than that of slurry chip, which depends on the concentration and temperature of potassium hydroxide. For more information about potassium hydroxide products, you can visit our website http://www.shrisa.cn Ask about it!